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Ordering number : ENA1477
EFC4612R
SANYO Semiconductors
DATA SHEET
EFC4612R
Features
* * * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW10s, duty cycle1% When mounted on ceramic substrate (5000mm2x0.8mm) Conditions Ratings 24 12 6 60 1.6 150 --55 to +150 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) | yfs | Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 0.5 3.1 Ratings min 24 1 10 1.3 typ max Unit V A A V S
Marking : FN
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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O0709PF TK IM TC-00001996 No. A1477-1/5
EFC4612R
Continued from preceding page.
Parameter Symbol RSS(on)1 RSS(on)2 Static Source-to-Source On-State Resistance RSS(on)3 RSS(on)4 RSS(on)5 Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Forward Source-to-Source Voltage td(on) tr td(off) tf Qg VF(S-S) Conditions IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=3A, VGS=3.7V IS=3A, VGS=3.1V IS=3A, VGS=2.5V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VSS=10V, VGS=4.5V, IS=6A IS=3A, VGS=0V Test Circuit 6 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 7 Test Circuit 7 Test Circuit 7 Test Circuit 7 Ratings min 24 25 27.5 31.5 33.5 typ 39 41 43 48 58 20 230 130 210 7 0.8 1.2 max 45 48 50 57 72 Unit m m m m m ns ns ns ns nC V
Package Dimensions
unit : mm (typ) 7064-001
Electrical Connection
1
1.26 4 3 Rg
2
1.26
1
2 0.22
Rg
3 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2
0.15
Rg=200
4
0.65 1 0.65 2
4
3
1 : Source1 2 : Gate1 3 : Gate2 4 : Source2
0.3
SANYO : EFCP1313-4CC-037
No. A1477-2/5
EFC4612R
Test circuits are example of measuring FET1 side
Test Circuit 1 VSSS / ISSS
S2 G2
Test Circuit 2 IGSS(+) / (--)
S2 G2
G1
G1
S1
IT11565
S1
IT11566
Test Circuit 3 VGS(off)
S2 G2
Test Circuit 4 | yfs |
S2 G2
G1
10V 1mA
G1
S1
IT11567
S1
IT11568
Test Circuit 5 RSS(on)
S2
Test Circuit 6 VF(S-S)
S2
4.5V
G2
G2
G1
G1
S1
IT11569
S1
IT11570
Test Circuit 7 td(on), tr, td(off), tf
VDD=10V IS=3A RL=3.33 V S2 OUT
VIN
G2
PW=10s D.C.1%
G1
S1
* Note: Connect the mesurement terminal reversely if you want to measure the FET2 side.
No. A1477-3/5
EFC4612R
10.0V 4.5V
6.0 5.5 5.0
IS -- VSS
2.5V
6
IS -- VGS
VSS=10V
Source Current, IS -- A
Source Current, IS -- A
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
4.0V 3.1V
5
4
V SS=1.5V
3
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0
0.5
1.0
25C --25C
1.5
2
Ta=7 5C
2.0 IT14681
Source-to-Source Voltage, VSS -- V
140
RSS(on) -- VGS
IT14720 140
Gate-to-Source Voltage, VGS -- V
RSS(on) -- Ta
Static Source-to-Source On-State Resistance, RSS(on) -- m
120 100 80 60 40 20 0
Static Source-to-Source On-State Resistance, RSS(on) -- m
Ta=25C IS=3A
120 100 80 60 40 20 0 --60
=3.7 VGS
=3A V, I S
3A , I S= 2.5V =3A S= VG V, I S =3.1 VGS A , I S=3 =4.5V VGS
3A .0V, I S= V GS=4
--40 --20 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10 IT14682
Gate-to-Source Voltage, VGS -- V
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2
IS -- VF(S-S)
Ambient Temperature, Ta -- C
1000 7
SW Time -- IS
IT14683
VGS=0V Switching Time, SW Time -- ns
5 3 2
VSS=10V VGS=4.5V
Source Current, IS -- A
td(off)
tf
100 7 5 3 2 10 0.01
tr
Ta=7 5C 25C --25C
td(on)
0.4
0.6
0.8
1.0
1.2 IT14684
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10 IT14685
Forward Source-to-Source Voltage, VF(S-S) -- V
4.5 4.0 3.5
VGS -- Qg
Source Current, IS -- A
2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
Gate-to-Source Voltage, VGS -- V
VSS=10V IS=6A Source Current, IS -- A
ISP=60A
1m 10 ms 1 DC 00m op s era tio n
PW10s
10 0 s
3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 IT14686
IS=6A
s
Operation in this area is limited by RSS(on). Ta=25C Single pulse When mounted on ceramic substrate (5000mm2x0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
0.01 0.01
Total Gate Charge, Qg -- nC
Source-to-Source Voltage, VSS -- V
IT14721
No. A1477-4/5
EFC4612R
1.8 1.6
PT -- Ta
When mounted on ceramic substrate (5000mm2x0.8mm)
Total Dissipation, PT -- W
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT14722
Note on usage : Since the EFC4612R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice.
PS No. A1477-5/5

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